Assessment of hot-hole-induced interface states and trapped carriers in submicron n (metal-oxide semiconductor field effect transistors) by gate-to-drain capacitance measurement

摘要

Change in small-signal gate-to-drain capacitance of an n-metal-oxide semiconductor field effect transistor as a function of gate and drain voltages before and after drain avalanche hot-hole injection was used to study the nature of trapped charge. The results show the trapping of holes and generation of acceptor interface states at the top half of the silicon band gap. Comparison with the P dangling bond model was made and the difference explained.